高频CMOS模拟集成电路基础 英文版PDF|Epub|txt|kindle电子书版本网盘下载

高频CMOS模拟集成电路基础 英文版PDF格式电子书版下载

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1 Components of analog CMOS ICs1

1.1 MOS transistors1

1.1.1 Current-voltage relations of MOS transistors3

1.1.1.1 The basic current-voltage relations without velocity saturation4

1.1.1.2 Current-voltage relations under velocity saturation11

1.1.1.3 The sub-threshold regime15

1.1.2 Determination of model parameters and related secondary effects19

1.1.2.1 Mobility20

1.1.2.2 Gate capacitance20

1.1.2.3 Threshold voltage21

1.1.2.4 Channel length modulation factor23

1.1.2.5 Gate length(L)and gate width(W)24

1.1.3 Parasitics of MOS transistors25

1.1.3.1 Parasitic capacitances26

1.1.3.2 The high-frequency figure of merit30

1.1.3.3 The parasitic resistances31

1.2 Passive on-chip components36

1.2.1 On-chip resistors36

1.2.2 On-chip capacitors38

1.2.2.1 Passive on-chip capacitors38

1.2.2.2 Varactors40

1.2.3 On-chip inductors43

2 Basic MOS amplifiers:DC and low-frequency behavior49

2.1 Common source(grounded source)amplifier49

2.1.1 Biasing53

2.1.2 The small-signal equivalent circuit54

2.2 Active transistor loaded MOS amplifier(CMOS inverter as analog amplifier)63

2.3 Common-gate(grounded-gate)amplifier68

2.4 Common-drain amplifier(source follower)70

2.5 The"long tailed pair"75

2.5.1 The large signal behavior of the long tailed pair84

2.5.2 Common-mode feedback88

3 High-frequency behavior of basic amplifiers95

3.1 High-frequency behavior of a common-source amplifier97

3.1.1 The R-C load case99

3.2 The source follower amplifier at radio frequencies103

3.3 The common-gate amplifier at high frequencies110

3.4 The"cascode"amplifier114

3.5 The CMOS inverter as a transimpedance amplifier118

3.6 MOS transistor with source degeneration at high frequencies126

3.7 High-frequency behavior of differential amplifiers129

3.7.1 The R-C loaded long tailed pair129

3.7.2 The fully differential,current-mirror loaded amplifier132

3.7.3 Frequency response of a single-ended output long tailed pair136

3.7.4 On the input and output admittances of the long tailed pair141

3.8 Gain enhancement techniques for high-frequency amplifiers143

3.8.1 "Additive"approach:distributed amplifiers144

3.8.2 Cascading strategies for basic gain stages146

3.8.3 An example:the"Cherry-Hooper"amplifier148

4 Frequency-selective RF circuits155

4.1 Resonance circuits156

4.1.1 The parallel resonance circuit156

4.1.1.1 The quality factor of a resonance circuit160

4.1.1.2 The quality factor from a different point of view163

4.1.1.3 The"Q enhancement"164

4.1.1.4 Bandwidth of a parallel resonance circuit168

4.1.1.5 Currents of L and C branches of a parallel resonance circuit169

4.1.2 The series resonance circuit170

4.1.2.1 Component voltages in a series resonance circuit172

4.2 Tuned amplifiers172

4.2.1 The common-source tuned amplifier173

4.2.2 The tuned cascode amplifier179

4.3 Cascaded tuned stages and the staggered tuning181

4.4 Amplifiers loaded with coupled resonance circuits189

4.4.1 Magnetic coupling189

4.4.2 Capacitive coupling194

4.5 The gyrator:a valuable tool to realize high-value on-chip inductances194

4.5.1 Parasitics of a non-ideal gyrator197

4.5.2 Dynamic range of a gyrator-based inductor201

4.6 The low-noise amplifier(LNA)202

4.6.1 Input impedance matching203

4.6.2 Basic circuits suitable for LNAs207

4.6.3 Noise in amplifiers210

4.6.3.1 Thermal noise of a resistor212

4.6.3.2 Thermal noise of a MOS transistor213

4.6.4 Noise in LNAs224

4.6.5 The differential LNA234

5 L-C oscillators237

5.1 The negative resistance approach to L-C oscillators237

5.2 The feedback approach to L-C oscillators245

5.3 Frequency stability of L-C oscillators249

5.3.1 Crystal oscillators251

5.3.2 The phase-lock technique253

5.3.3 Phase noise in oscillators255

6 Analog-digital interface and system-level design considerations259

6.1 General observations259

6.2 Discrete-time sampling263

6.3 Influence of sampling clock jitter265

6.4 Quantization noise267

6.5 Converter specifications268

6.5.1 Static specifications269

6.5.2 Frequency-domain dynamic specifications273

6.6 Additional observations on noise in high-frequency ICs275

Appendix A Mobility degradation due to the transversal field277

Appendix B Characteristic curves and parameters of AMS 0.35 micron NMOS and PMOS transistors279

Appendix C BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOS transistors281

Appendix D Current sources and current mirrors287

D.1 DC current sources287

D.2 Frequency characteristics of basic current mirrors289

D.2.1 Frequency characteristics for normal saturation291

D.2.2 Frequency characteristics under velocity saturation292

References293

Index297